Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich

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https://www.ksp.kit.edu/9783731501619
Author(s)
Diebold, Sebastian
Language
German
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Abstract
The aim of this work is the design of monolithic integrated power amplifiers for frequencies from 200 to 250 GHz and beyond. For this, reliable and flexible transmission line and transistor models are required. The models are created and their accuracy is verified up to 325 GHz. An innovative coupler concept is developed. It is tailor-made for the applied MMIC-technology and the frequency range. Based on this coupler, a novel amplifier topology has been established and applied.
URI
https://directory.doabooks.org/handle/20.500.12854/61216
Keywords
power amplifier; III-V semiconductor; HEMT; millimetre-wave; koplanarer Wellenleiter; monolithic integrated; mHEMT; Verbindungshalbleiter; Mikrostreifenleitung; coplanar waveguide; FETmillimeterwave; Terahertz; microstrip transmission line; 3-5; MMIC; Leistungsverstärker; Millimeterwelle
DOI
10.5445/KSP/1000037898
ISBN
9783731501619
Publisher
KIT Scientific Publishing
Publisher website
http://www.ksp.kit.edu/
Publication date and place
2013
Series
Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik,
Classification
Technology: general issues
Pages
XIII, 217 p.
Review type
Full text
Anonymity
All identities known
Reviewer type
Editorial board member; External peer reviewer
Review stage
Pre-publication
Open review
No
Publish responsibility
Books or series editor
Rights
https://creativecommons.org/licenses/by-sa/4.0/
https://creativecommons.org/licenses/by-sa/4.0/
Except where otherwise noted, this item's license is described as https://creativecommons.org/licenses/by-sa/4.0/