Radiation Effects of Advanced Electronic Devices and Circuits

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https://mdpi.com/books/pdfview/book/9448Contributor(s)
Chi, Yaqing (editor)
Cai, Li (editor)
Cai, Chang (editor)
Language
EnglishAbstract
As integrated circuit technologies continue to scale down and electronic devices become more complex, their susceptibility to ionizing radiation has introduced numerous exciting challenges, anticipated to drive research over the next decade. Consequently, new solutions are necessary to mitigate radiation sensitivity in advanced devices and integrated circuits. The aim of this reprint is to disclose the basic mechanisms of radiation effects for advanced devices and the breakthrough of new solutions to assess and mitigate radiation sensitivity in advanced devices and integrated circuits. This reprint presents new modeling approaches that predict how radiation impacts electronic devices and circuits. Accurate models are essential for designing devices that can tolerate radiation without significant performance degradation. We also focus on the innovative design and fabrication techniques that enhance the radiation tolerance of integrated circuits. Moreover, some discussions highlight new testing protocols and methodologies that provide more accurate and comprehensive evaluations of radiation hardness, as well as the latest advancements and trends that are of particular interest to researchers and professionals in the radiation effects community. Overall, this issue offers valuable insights into the challenges and opportunities in this rapidly evolving field, highlighting the critical importance of continued innovation and collaboration to address the complex problems posed by radiation in modern electronics.
Keywords
single event upset (SEU); total ionizing dose (TID); silicon-on-insulator (SOI); synergistic effect; radiation-hardened by design (RHBD); CMOS devices; single event latch-up (SEL); single event effect (SEE); resistor; pulsed laser; SiGe HBT; Geant4; TCAD simulation; single event transient; cryogenic temperature; carbon nanotube field effect transistor; total ionizing dose; radiation effect; trapped charge; SiGe heterojunction bipolar transistor; single event effect; charge collection; VDMOS; variability; oxide trapped charges; interface traps; CMOS image sensor; star sensor; hot pixel; single-event transient; star map recognition algorithm; spallation neutron; thermal neutron; Monte Carlo; system on chip; split-gate-enhanced VDMOSFET; planar gate VDMOSFET; total ionizing dose effect; long-term reliability; TID; radiation effects; camera resolution; single event effects; transient bright spot; single event upset; SiC MOSFET; heavy-ion irradiation; oxide reliability; TCAD; high-dose-rate transient ionizing effect; FDSOI; supply voltage; Monte-Carlo method; radiation shielding; space radiation; reliability; SOI; MOSFET; radiation; HCI; single-event effect; single-event gate rupture; leakage current; heavy ion irradiation; machine learning; soft error rate; transient pulse propagation; relay protection device; fault injection; soft error; CMOS SPAD; proton radiation; DCR; displacement damage; n/aWebshop link
https://mdpi.com/books/pdfview ...ISBN
9783725814817, 9783725814824Publisher website
www.mdpi.com/booksPublication date and place
2024Classification
Technology, Engineering, Agriculture, Industrial processes
Technology: general issues
Engineering: general
Electronics and communications engineering
Electronics engineering

