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dc.contributor.editorPiotrowska, Anna B.
dc.contributor.editorKamińska, Eliana
dc.contributor.editorWojtasiak, Wojciech
dc.date.accessioned2022-01-11T13:52:23Z
dc.date.available2022-01-11T13:52:23Z
dc.date.issued2021
dc.identifierONIX_20220111_9783036515229_937
dc.identifier.urihttps://directory.doabooks.org/handle/20.500.12854/77105
dc.description.abstractOwing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.
dc.languageEnglish
dc.subject.classificationbic Book Industry Communication::T Technology, engineering, agriculture::TB Technology: general issues
dc.subject.otherGaN HEMT
dc.subject.otherself-heating effect
dc.subject.othermicrowave power amplifier
dc.subject.otherthermal impedance
dc.subject.otherthermal time constant
dc.subject.otherthermal equivalent circuit
dc.subject.otherGaN
dc.subject.othercrystal growth
dc.subject.otherammonothermal method
dc.subject.otherHVPE
dc.subject.otherion implantation
dc.subject.othergallium nitride
dc.subject.otherthermodynamics
dc.subject.otherultra-high-pressure annealing
dc.subject.otherdiffusion
dc.subject.otherdiffusion coefficients
dc.subject.othermolecular beam epitaxy
dc.subject.othernitrides
dc.subject.otherlaser diode
dc.subject.othertunnel junction
dc.subject.otherLTE
dc.subject.otherAlN
dc.subject.otherAlGaN/GaN
dc.subject.otherinterface state density
dc.subject.otherconductance-frequency
dc.subject.otherMISHEMT
dc.subject.othergallium nitride nanowires
dc.subject.otherpolarity
dc.subject.otherKelvin probe force microscopy
dc.subject.otherselective area growth
dc.subject.otherselective epitaxy
dc.subject.otherAlGaN/GaN heterostructures
dc.subject.otheredge effects
dc.subject.othereffective diffusion length
dc.subject.otherMOVPE
dc.subject.othernanowires
dc.subject.otherAlGaN
dc.subject.otherLEDs
dc.subject.othergrowth polarity
dc.subject.othern/a
dc.titleMicro- and Nanotechnology of Wide Bandgap Semiconductors
dc.typebook
oapen.identifier.doi10.3390/books978-3-0365-1521-2
oapen.relation.isPublishedBy46cabcaa-dd94-4bfe-87b4-55023c1b36d0
oapen.relation.isbn9783036515229
oapen.relation.isbn9783036515212
oapen.pages114
oapen.place.publicationBasel, Switzerland


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