Wide Bandgap Semiconductor Based Micro/Nano Devices

Seo, Jung-Hun

doi:10.3390/books978-3-03897-843-5

dc.contributor.author	Seo, Jung-Hun	*
dc.date.accessioned	2021-02-12T08:35:26Z
dc.date.available	2021-02-12T08:35:26Z
dc.date.issued	2019	*
dc.date.submitted	2019-08-28 11:21:27	*
dc.identifier	35950	*
dc.identifier.uri	https://directory.doabooks.org/handle/20.500.12854/62681
dc.description.abstract	While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.	*
dc.language	English	*
dc.subject	TA1-2040	*
dc.subject	TK1-9971	*
dc.subject	T1-995	*
dc.subject.classification	thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology	en_US
dc.subject.other	ohmic contact	*
dc.subject.other	n/a	*
dc.subject.other	MESFET	*
dc.subject.other	optical band gap	*
dc.subject.other	wide-bandgap semiconductor	*
dc.subject.other	annealing temperature	*
dc.subject.other	junction termination extension (JTE)	*
dc.subject.other	channel length modulation	*
dc.subject.other	silicon carbide (SiC)	*
dc.subject.other	amorphous InGaZnO (a-IGZO)	*
dc.subject.other	light output power	*
dc.subject.other	GaN	*
dc.subject.other	electrochromism	*
dc.subject.other	large signal performance	*
dc.subject.other	passivation layer	*
dc.subject.other	4H-SiC	*
dc.subject.other	positive gate bias stress (PGBS)	*
dc.subject.other	asymmetric power combining	*
dc.subject.other	ultrahigh upper gate height	*
dc.subject.other	high electron mobility transistors	*
dc.subject.other	space application	*
dc.subject.other	gallium nitride (GaN)	*
dc.subject.other	phase balance	*
dc.subject.other	edge termination	*
dc.subject.other	distributed Bragg reflector	*
dc.subject.other	cathode field plate (CFP)	*
dc.subject.other	ammonothermal GaN	*
dc.subject.other	anode field plate (AFP)	*
dc.subject.other	W band	*
dc.subject.other	GaN high electron mobility transistor (HEMT)	*
dc.subject.other	1T DRAM	*
dc.subject.other	growth of GaN	*
dc.subject.other	tungsten trioxide film	*
dc.subject.other	thin-film transistor (TFT)	*
dc.subject.other	micron-sized patterned sapphire substrate	*
dc.subject.other	power added efficiency	*
dc.subject.other	T-anode	*
dc.subject.other	analytical model	*
dc.subject.other	AlGaN/GaN	*
dc.subject.other	harsh environment	*
dc.subject.other	high-temperature operation	*
dc.subject.other	amplitude balance	*
dc.subject.other	buffer layer	*
dc.subject.other	characteristic length	*
dc.subject.other	Ku-band	*
dc.subject.other	DIBL effect	*
dc.subject.other	I–V kink effect	*
dc.subject.other	flip-chip light-emitting diodes	*
dc.subject.other	high electron mobility transistors (HEMTs)	*
dc.subject.other	power amplifier	*
dc.subject.other	sidewall GaN	*
dc.subject.other	external quantum efficiency	*
dc.subject.other	breakdown voltage (BV)	*
dc.subject.other	threshold voltage (Vth) stability	*
dc.subject.other	regrown contact	*
dc.subject.other	AlGaN/GaN HEMT	*
dc.subject.other	TCAD	*
dc.subject.other	high electron mobility transistor (HEMT)	*
dc.title	Wide Bandgap Semiconductor Based Micro/Nano Devices	*
dc.type	book
oapen.identifier.doi	10.3390/books978-3-03897-843-5	*
oapen.relation.isPublishedBy	46cabcaa-dd94-4bfe-87b4-55023c1b36d0	*
oapen.relation.isbn	9783038978435	*
oapen.relation.isbn	9783038978428	*
oapen.pages	138	*
oapen.edition	1st	*

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