Fundamentals and Recent Advances in Epitaxial Graphene on SiC

doi:10.3390/books978-3-0365-1178-8

Download Url(s)

https://mdpi.com/books/pdfview/book/3773

Contributor(s)

Yakimova, Rositsa (editor)

Shtepliuk, Ivan (editor)

Language

English

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Abstract

This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.

URI

https://directory.doabooks.org/handle/20.500.12854/76348

Keywords

epitaxial graphene; copper; redox reaction; electrodeposition; voltammetry; chronoamperometry; DFT; silicon carbide; Raman spectroscopy; 2D peak line shape; G peak; charge density; strain; atomic layer deposition; high-k insulators; ion implantation; Raman; AFM; XPS; graphene; SiC; 3C-SiC on Si; substrate interaction; carrier concentration; mobility; intercalation; buffer layer; surface functionalization; twistronics; twisted bilayer graphene; flat band; epitaxial graphene on SiC; quasi-free-standing graphene; monolayer graphene; high-temperature sublimation; terahertz optical Hall effect; free charge carrier properties; sublimation; electronic properties; material engineering; deposition