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dc.contributor.editorDjenizian, Thierry
dc.contributor.editorHans Voelcker, Nicolas
dc.date.accessioned2021-11-18T16:24:50Z
dc.date.available2021-11-18T16:24:50Z
dc.date.issued2020
dc.identifierONIX_20211118_9782889636495_923
dc.identifier.urihttps://directory.doabooks.org/handle/20.500.12854/73791
dc.description.abstractSince the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties for many applications in optics, microelectronics, energy, biology and medicine.
dc.languageEnglish
dc.subject.classificationthema EDItEUR::P Mathematics and Science::PD Science: general issuesen_US
dc.subject.othersemiconductor
dc.subject.otherporous material
dc.subject.othermicrofabrication
dc.subject.othernanomaterials
dc.subject.otherNanotechnologies
dc.titleAdvances in Porous Semiconductor Research
dc.typebook
oapen.identifier.doi10.3389/978-2-88963-649-5
oapen.relation.isPublishedBybf5ce210-e72e-4860-ba9b-c305640ff3ae
oapen.relation.isbn9782889636495
oapen.pages183


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