Preparation and Properties of 2D Materials
Cho, Byungjin (editor)
Kim, Yonghun (editor)
Since the great success of graphene, atomically thin-layered nanomaterials, called two dimensional (2D) materials, have attracted tremendous attention due to their extraordinary physical properties. Specifically, van der Waals heterostructured architectures based on a few 2D materials, named atomic-scale Lego, have been proposed as unprecedented platforms for the implementation of versatile devices with a completely novel function or extremely high-performance, shifting the research paradigm in materials science and engineering. Thus, diverse 2D materials beyond existing bulk materials have been widely studied for promising electronic, optoelectronic, mechanical, and thermoelectric applications. Especially, this Special Issue included the recent advances in the unique preparation methods such as exfoliation-based synthesis and vacuum-based deposition of diverse 2D materials and also their device applications based on interesting physical properties. Specifically, this Editorial consists of the following two parts: Preparation methods of 2D materials and Properties of 2D materials
Keywordsα-MoO3; carbon nitride; g-C3N4; molybdenum trioxide; nanoplates; synthesis; few-layer MoS2; magnetron sputtering; magnetron sputtering power; raman spectroscopy; disorder; V2Se9; atomic crystal; mechanical exfoliation; scanning Kelvin probe microscopy; MoS2; black phosphorus; 2D/2D heterojunction; junction FET; tunneling diode; tunneling FET; band-to-band tunneling (BTBT); natural molybdenite; MoS2 nanosheet; SiO2; liquid exfoliation; photoelectric properties; uniaxial strain; flexible substrate; film–substrate interaction; photoluminescence; Raman spectroscopy; molybdenum disulfide; bilayer-stacked structure; WS2; lubricant additives; tribological properties; interfacial layer; contact resistance; bias stress stability; saturable absorbers; Langmuir–Blodgett technique; Q-switched laser; chemical vapor deposition; P2O5; p-type conduction; P-doped MoS2; transition metal dichalcogenides; two-dimensional materials; ferroelectrics; 2D heterostructure; WSe2; NbSe2; Nb2O5 interlayer; synapse device; neuromorphic system; n/a
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Publication date and placeBasel, Switzerland, 2020
History of engineering & technology