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dc.contributor.authorHorng, Ray-Hua*
dc.date.accessioned2021-02-12T05:53:00Z
dc.date.available2021-02-12T05:53:00Z
dc.date.issued2019*
dc.date.submitted2019-12-09 16:10:12*
dc.identifier42700*
dc.identifier.urihttps://directory.doabooks.org/handle/20.500.12854/60888
dc.description.abstractRecently, new wide-band energy gap semiconductors can be grown by ALD, PLD, sputtering, or MOCVD. They have great potential for the fabrication and application to TFTs. Inorganic semiconductors have good stability against environmental degradation over their organic counterparts, whereas organic materials are usually flexible, transparent, and when solution-processed at low temperatures, are prone to degradation when exposed to heat, moisture, and oxygen. For this Special Issue, we invited researchers to submit papers discussing the development of new functional and smart materials, and inorganic as well as organic semiconductor materials, such as ZnO, InZnO, GaO, AlGaO, AnGaO, AlN/GaN, conducting polymers, molecular semiconductors, perovskite-based materials, carbon nanotubes, carbon nanotubes/polymer composites, and 2D materials (e.g., graphene, MoS2) and their potential applications in display drivers, radio frequency identification tags, e-paper, gas, chemical and biosensors, to name but a few.*
dc.languageEnglish*
dc.subjectTA1-2040*
dc.subjectTK1-9971*
dc.subjectT1-995*
dc.subject.othercharge transport and injection mechanisms*
dc.subject.otheroptical synaptic devices*
dc.subject.otherflat panel displays*
dc.subject.othersimulation*
dc.subject.otherpersistent photoconductivity*
dc.subject.otherhydrogen*
dc.subject.otherinterdigitated*
dc.subject.otherinterface state trap density*
dc.subject.othertechnology computer aided design (TCAD)*
dc.subject.otheroxygen defects*
dc.subject.otherCorbino*
dc.subject.othertransistor model evaluation*
dc.subject.othermetal-halide lamp*
dc.subject.otherInGaZnOx*
dc.subject.othercontact resistances*
dc.subject.otherchemical treatment*
dc.subject.othercolour difference*
dc.subject.otherorganic transistor*
dc.subject.otherequivalent circuit*
dc.subject.otherchannel-length dependence*
dc.subject.otherjust noticeable difference*
dc.subject.otheroxide semiconductor*
dc.subject.otherOTFT*
dc.subject.otherchromaticity*
dc.subject.othermodeling contact effects*
dc.subject.otheroxygen deficiency*
dc.subject.otherdual-threshold inverter*
dc.subject.othersurface treated*
dc.subject.othercharge-carrier-mobility extraction*
dc.subject.otheroptical detecting*
dc.subject.otherthin film transistor*
dc.subject.othergreen*
dc.subject.otherphoto-sensors*
dc.subject.othermodelling*
dc.subject.othercapacitor*
dc.subject.otherTFT-LCD*
dc.subject.otherorganic thin-film transistor*
dc.subject.otherspectrum*
dc.subject.otherhydrogen effect*
dc.subject.otherorganic film growth*
dc.subject.othertransparent conducting oxides*
dc.subject.otherquartz-halogen lamp*
dc.subject.otheroptical*
dc.subject.otherblue LED*
dc.titleThin Film Transistor*
dc.typebook
oapen.identifier.doi10.3390/books978-3-03921-527-0*
oapen.relation.isPublishedBy46cabcaa-dd94-4bfe-87b4-55023c1b36d0*
oapen.relation.isbn9783039215270*
oapen.relation.isbn9783039215263*
oapen.pages108*
oapen.edition1st*


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