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dc.contributor.authorGrasser, Tibor*
dc.contributor.authorFilipovic, Lado*
dc.date.accessioned2021-02-11T19:44:34Z
dc.date.available2021-02-11T19:44:34Z
dc.date.issued2019*
dc.date.submitted2019-06-26 08:44:06*
dc.identifier33701*
dc.identifier.urihttps://directory.doabooks.org/handle/20.500.12854/53550
dc.description.abstractWhat is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.*
dc.languageEnglish*
dc.subjectTA1-2040*
dc.subjectT1-995*
dc.subject.otherMOSFET*
dc.subject.othern/a*
dc.subject.othertotal ionizing dose (TID)*
dc.subject.otherlow power consumption*
dc.subject.otherprocess simulation*
dc.subject.othertwo-dimensional material*
dc.subject.othernegative-capacitance*
dc.subject.otherpower consumption*
dc.subject.othertechnology computer aided design (TCAD)*
dc.subject.otherthin-film transistors (TFTs)*
dc.subject.otherband-to-band tunneling (BTBT)*
dc.subject.othernanowires*
dc.subject.otherinversion channel*
dc.subject.othermetal oxide semiconductor field effect transistor (MOSFET)*
dc.subject.otherspike-timing-dependent plasticity (STDP)*
dc.subject.otherfield effect transistor*
dc.subject.othersegregation*
dc.subject.othersystematic variations*
dc.subject.otherSentaurus TCAD*
dc.subject.otherindium selenide*
dc.subject.othernanosheets*
dc.subject.othertechnology computer-aided design (TCAD)*
dc.subject.otherhigh-? dielectric*
dc.subject.othersubthreshold bias range*
dc.subject.otherstatistical variations*
dc.subject.otherfin field effect transistor (FinFET)*
dc.subject.othercompact models*
dc.subject.othernon-equilibrium Green’s function*
dc.subject.otheretching simulation*
dc.subject.otherhighly miniaturized transistor structure*
dc.subject.othercompact model*
dc.subject.othersilicon nanowire*
dc.subject.othersurface potential*
dc.subject.otherSilicon-Germanium source/drain (SiGe S/D)*
dc.subject.othernanowire*
dc.subject.otherplasma-aided molecular beam epitaxy (MBE)*
dc.subject.otherphonon scattering*
dc.subject.othermobility*
dc.subject.othersilicon-on-insulator*
dc.subject.otherdrain engineered*
dc.subject.otherdevice simulation*
dc.subject.othervariability*
dc.subject.othersemi-floating gate*
dc.subject.othersynaptic transistor*
dc.subject.otherneuromorphic system*
dc.subject.othertheoretical model*
dc.subject.otherCMOS*
dc.subject.otherferroelectrics*
dc.subject.othertunnel field-effect transistor (TFET)*
dc.subject.otherSiGe*
dc.subject.othermetal gate granularity*
dc.subject.otherburied channel*
dc.subject.otherON-state*
dc.subject.otherbulk NMOS devices*
dc.subject.otherambipolar*
dc.subject.otherpiezoelectrics*
dc.subject.othertunnel field effect transistor (TFET)*
dc.subject.otherFinFETs*
dc.subject.otherpolarization*
dc.subject.otherfield-effect transistor*
dc.subject.otherline edge roughness*
dc.subject.otherrandom discrete dopants*
dc.subject.otherradiation hardened by design (RHBD)*
dc.subject.otherlow energy*
dc.subject.otherflux calculation*
dc.subject.otherdoping incorporation*
dc.subject.otherlow voltage*
dc.subject.othertopography simulation*
dc.subject.otherMOS devices*
dc.subject.otherlow-frequency noise*
dc.subject.otherhigh-k*
dc.subject.otherlayout*
dc.subject.otherlevel set*
dc.subject.otherprocess variations*
dc.subject.othersubthreshold*
dc.subject.othermetal gate stack*
dc.subject.otherelectrostatic discharge (ESD)*
dc.titleMiniaturized Transistors*
dc.typebook
oapen.identifier.doi10.3390/books978-3-03921-011-4*
oapen.relation.isPublishedBy46cabcaa-dd94-4bfe-87b4-55023c1b36d0*
virtual.oapen_relation_isPublishedBy.publisher_nameMDPI - Multidisciplinary Digital Publishing Institute
virtual.oapen_relation_isPublishedBy.publisher_websitewww.mdpi.com/books
oapen.relation.isbn9783039210107*
oapen.relation.isbn9783039210114*
oapen.pages202*
oapen.edition1st*


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