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dc.contributor.authorSchneider, Karl*
dc.date.accessioned2021-02-11T09:20:39Z
dc.date.available2021-02-11T09:20:39Z
dc.date.issued2006*
dc.date.submitted2019-07-30 20:02:02*
dc.identifier35598*
dc.identifier.urihttps://directory.doabooks.org/handle/20.500.12854/42490
dc.description.abstractThis work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers.*
dc.languageEnglish*
dc.subjectT1-995*
dc.subject.otherbipolar transistor amplifier*
dc.subject.othertransistor optimization*
dc.subject.othertransistor model*
dc.subject.otherdistributed amplifier*
dc.subject.otherhetojunction bipolar transistor*
dc.titleBroadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors*
dc.typebook
oapen.identifier.doi10.5445/KSP/1000004373*
oapen.relation.isPublishedBy68fffc18-8f7b-44fa-ac7e-0b7d7d979bd2*
virtual.oapen_relation_isPublishedBy.publisher_nameKIT Scientific Publishing
virtual.oapen_relation_isPublishedBy.publisher_websitehttp://www.ksp.kit.edu/
oapen.relation.isbn3866440219*
oapen.pagesVI, 132 p.*


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Except where otherwise noted, this item's license is described as https://creativecommons.org/licenses/by-nc-nd/4.0/