AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
Résumé
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Keywords
MMIC design; power amplifier; AlGaN/GaN HEMT; X-band; power-added efficiencyISBN
9783866446151Publisher
KIT Scientific PublishingPublisher website
http://www.ksp.kit.edu/Publication date and place
2011Series
Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik,Classification
Technology: general issues