TY  - BOOK
AU  - Seo, Jung-Hun
AB  - While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
DO  - 10.3390/books978-3-03897-843-5
ID  - OAPEN ID: 35950
KW  - ohmic contact
KW  - n/a
KW  - MESFET
KW  - optical band gap
KW  - wide-bandgap semiconductor
KW  - annealing temperature
KW  - junction termination extension (JTE)
KW  - channel length modulation
KW  - silicon carbide (SiC)
KW  - amorphous InGaZnO (a-IGZO)
KW  - light output power
KW  - GaN
KW  - electrochromism
KW  - large signal performance
KW  - passivation layer
KW  - 4H-SiC
KW  - positive gate bias stress (PGBS)
KW  - asymmetric power combining
KW  - ultrahigh upper gate height
KW  - high electron mobility transistors
KW  - space application
KW  - gallium nitride (GaN)
KW  - phase balance
KW  - edge termination
KW  - distributed Bragg reflector
KW  - cathode field plate (CFP)
KW  - ammonothermal GaN
KW  - anode field plate (AFP)
KW  - W band
KW  - GaN high electron mobility transistor (HEMT)
KW  - 1T DRAM
KW  - growth of GaN
KW  - tungsten trioxide film
KW  - thin-film transistor (TFT)
KW  - micron-sized patterned sapphire substrate
KW  - power added efficiency
KW  - T-anode
KW  - analytical model
KW  - AlGaN/GaN
KW  - harsh environment
KW  - high-temperature operation
KW  - amplitude balance
KW  - buffer layer
KW  - characteristic length
KW  - Ku-band
KW  - DIBL effect
KW  - I–V kink effect
KW  - flip-chip light-emitting diodes
KW  - high electron mobility transistors (HEMTs)
KW  - power amplifier
KW  - sidewall GaN
KW  - external quantum efficiency
KW  - breakdown voltage (BV)
KW  - threshold voltage (Vth) stability
KW  - regrown contact
KW  - AlGaN/GaN HEMT
KW  - TCAD
KW  - high electron mobility transistor (HEMT)
L1  - https://mdpi.com/books/pdfview/book/1265
LA  - English
LK  - https://directory.doabooks.org/handle/20.500.12854/62681
PB  - MDPI - Multidisciplinary Digital Publishing Institute
PY  - 2019
SN  - 9783038978435
SN  - 9783038978428
TI  - Wide Bandgap Semiconductor Based Micro/Nano Devicesnull
ER  - 
